Cascaded L-Section Matching
Description
Cascaded L-section matching uses multiple L-sections in series to achieve impedance matching with broader bandwidth than a single L-section. Each section provides a partial impedance (real to real) transformation using lumped elements (inductors and capacitors).
When to Use
Lumped element implementation required
Moderate bandwidth needed (broader than single L-section)
Low to moderate frequencies (< 2 GHz typically)
Compact size preferred over transmission lines
Design Theory
The load and source impedances are connected through N intermediate resistance values, with each adjacent pair matched by an L-section.
Intermediate Resistances
where R₁ is the higher resistance and R₂ is the lower resistance.
Quality Factor per Section
For section i (high-to-low transition):
Lowpass vs Highpass
Each L-section can be implemented in lowpass or highpass configuration, giving the network different filtering characteristics.
Lowpass Configuration
Series inductors and shunt capacitors:
Characteristics
DC pass, high-frequency attenuation
Highpass Configuration
Series capacitors and shunt inductors:
Characteristics
DC block, low-frequency attenuation
Parameters
Parameter |
Description |
|---|---|
Z0 |
Source impedance (Ω) |
ZL |
Load impedance (real part) (Ω) |
Frequency |
Matching frequency (Hz) |
Sections (N) |
Number of L-sections (2-10) |
Solution |
Lowpass (1) or Highpass (2) |
Design Equations
For Z0 > RL (Step-down)
Starting from source, each section:
Shunt element first (C for lowpass, L for highpass)
Series element second (L for lowpass, C for highpass)
For Z0 < RL (Step-up)
Starting from source, each section:
Series element first
Shunt element second
Network is designed in reverse, working backwards from load.
Component Values
Lowpass configuration (Z0 > RL):
Highpass configuration (Z0 > RL):
Bandwidth Considerations
Q Factor per Section
With N sections, each has quality factor:
where Q_total is the Q of a single-section match.
Example
Match 10Ω to 50Ω at 500 MHz (3-section Lowpass)
Given:
Z0 = 50Ω
RL = 10Ω
f = 1000 MHz
N = 3 sections
Lowpass configuration
Results:
Section 1: C₁ = 2.68 pF (shunt), L₁ = 3.92 nH (series)
Section 2: C₂ = 4.59 pF (shunt), L₂ = 2.29 nH (series)
Section 3: C₃ = 7.84 pF (shunt), L₃ = 1.34 nH (series)
Circuit topology:
Port ──┬── L₁ ──┬── L₂ ──┬── L₃ ── Load(10Ω)
│ │ │
C₁ C₂ C₃
│ │ │
GND GND GND
Reference
Bahl, I. J. “Fundamentals of RF and Microwave Transistor Amplifiers”, Wiley, 2009, pp. 169-170